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Same model may have multiple batches, images only for reference.
SI7407DN-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7407DN-T1-E3

Part No SI7407DN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 9.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 12mOhm @ 15.6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 400µA
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 4.5 V
Vgs (Max) ±8V
Power Dissipation (Max) 1.5W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Base Product Number SI7407
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277504-SI7407DN-T1-E3
Ultra Librarian 3D Model Ultra Librarian SI7407DN-T1-E3 CAD Model

Description

The Vishay Siliconix SI7407DN-T1-E3 is a MOSFET transistor with a P-Channel FET type.

  • Drain to Source Voltage: 12V
  • Continuous Drain Current: 9.9A (Ta) @ 25°C
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 15.6A, 4.5V
  • Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 4.5 V
  • Vgs(th) (Max) @ Id: 1V @ 400µA
  • Power Dissipation (Max): 1.5W (Ta)

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