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SI7456DP-T1-E3

Part No SI7456DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 100V 5.7A Automotive 8-Pin PowerPAK SO T/R / MOSFET N-CH 100V 5.7A PPAK SO-8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 44nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.9W (Ta)
Maximum Rds On at Id,Vgs 25 mOhm @ 9.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 028646-SI7456DP-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name Si7456DP
Introduction Date May 11, 2001
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI7456DP-T1-E3 CAD Model

Description

The Vishay Si7456DP is an N-Channel MOSFET designed for use in discrete semiconductor products.

  • Case/Package: PowerPAK SO-8
  • Drain-Source Breakdown Voltage: 100V
  • Maximum Continuous Drain Current at 25°C: 5.7A (Ta)
  • Maximum Rds On at Id,Vgs: 25 mOhm @ 9.3A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 44nC @ 10V
  • Maximum Input Capacitance: not specified
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1642 $52.3890
105+ $0.9553 $100.3065
165+ $0.9254 $152.6910
225+ $0.8956 $201.5100
290+ $0.8657 $251.0530
390+ $0.7762 $302.7180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 28,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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