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Same model may have multiple batches, images only for reference.
SIHB22N60E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHB22N60E-GE3

Part No SIHB22N60E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 21A D2PAK
Datasheet
SIHB22N60E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 86nC @ 10V
Max Input Capacitance 1920pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 227W (Tc)
Maximum Rds On at Id,Vgs 180 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 211699-SIHB22N60E-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIHB22N60E-GE3 CAD Model

Description

The SIHB22N60E-GE3 is a MOSFET technology N-channel polarity electronic component manufactured by Vishay.

  • Popularity: high
  • Supply and Demand Status: limited
  • Maximum Rds On: 180 mOhm @ 11A, 10V
  • Continuous Drain Current (Tc): 21A
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Gate Charge: 86nC @ 10V

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Quantity Unit Price Ext. Price
12+ $4.3657 $52.3884
28+ $3.5821 $100.2988
44+ $3.4702 $152.6888
60+ $3.3583 $201.4980
78+ $3.2463 $253.2114
104+ $2.9105 $302.6920
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Availability: 11,000 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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