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SI7634BDP-T1-GE3

Part No SI7634BDP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 40A PPAK SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.6V @ 250μA
Max Gate Charge 68nC @ 10V
Max Input Capacitance 3150pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5W (Ta), 48W (Tc)
Maximum Rds On at Id,Vgs 5.4 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 028658-SI7634BDP-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI7634BDP-T1-GE3 CAD Model

Description

The Vishay 028658-SI7634BDP-T1-GE3 is a MOSFET transistor designed for use in discrete semiconductor products.

  • Channel Type: N-channel
  • Power Dissipation: 5W (Ta) and 48W (Tc)
  • Maximum Drain-Source Breakdown Voltage: 30V
  • Maximum Continuous Drain Current: 40A (Tc)
  • Gate-Source Threshold Voltage: 2.6V @ 250μA
  • Maximum Gate Charge: 68nC @ 10V
  • Maximum Input Capacitance: 3150pF @ 15V
  • Common Use: Industrial power management applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3915 $62.6175
105+ $1.1418 $119.8890
160+ $1.1062 $176.9920
220+ $1.0705 $235.5100
280+ $1.0348 $289.7440
375+ $0.9277 $347.8875
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 91,200 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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