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Same model may have multiple batches, images only for reference.
SI7668ADP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7668ADP-T1-GE3

Part No SI7668ADP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 40A PPAK SO-8
Datasheet
SI7668ADP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.8V @ 250μA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 8820pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 5.4W (Ta), 83W (Tc)
Maximum Rds On at Id,Vgs 3 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 1096190-SI7668ADP-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian SI7668ADP-T1-GE3 CAD Model

Description

This MOSFET electronic component is manufactured by Vishay.

  • Polarity: N-Channel
  • Maximum Power Dissipation: 5.4W (Ta), 83W (Tc)
  • Packaging: Reel-TR
  • Mounting: SMD (SMT)
  • Drive Voltage: 4.5V, 10V
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On @ Id, Vgs: 3 mOhm @ 25A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4712 $58.9000
300+ $0.3869 $116.0700
465+ $0.3742 $174.0030
640+ $0.3627 $232.1280
830+ $0.3500 $290.5000
1,105+ $0.3142 $347.1910
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,935 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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