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Same model may have multiple batches, images only for reference.
SI7820DN-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7820DN-T1-E3

Part No SI7820DN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 1.7A 1212-8
Datasheet
SI7820DN-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 18nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 240 mOhm @ 2.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 115053-SI7820DN-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7820DN-T1-E3 CAD Model

Description

The Vishay SI7820DN-T1-E3 is an N-Channel MOSFET that is used in various applications.

  • Mounting Type: surface mount
  • Power Dissipation: 1.5W (Ta)
  • Drive Voltage: 6V and 10V
  • Status: active
  • Package: PowerPAK 1212-8
  • Operating Temperature: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 1.7A (Ta)
  • Maximum Gate-Source Voltage: ±20V
  • Supply and Demand: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8408 $58.8560
170+ $0.6907 $117.4190
260+ $0.6687 $173.8620
360+ $0.6468 $232.8480
465+ $0.6260 $291.0900
620+ $0.5613 $348.0060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,800 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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