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Same model may have multiple batches, images only for reference.
SI7860DP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7860DP-T1-E3

Part No SI7860DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A PPAK SO-8
Datasheet
SI7860DP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 18nC @ 4.5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 8 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 111585-SI7860DP-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7860DP-T1-E3 CAD Model

Description

The SI7860DP-T1-E3 is a MOSFET IC manufactured by Vishay.

  • Supply and Demand Status: balanced
  • Win Source Part Number: 111585-SI7860DP-T1-E3
  • Channel Polarity: N-channel
  • Maximum Power Dissipation: 1.8W (Ta)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 11A (Ta)
  • Maximum Rds On @ Id,Vgs: 8 mOhm @ 18A, 10V
  • Status: obsolete (EOL)
  • Case/Package: PowerPAK SO-8

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0967 $60.3185
130+ $0.8999 $116.9870
200+ $0.8718 $174.3600
275+ $0.8436 $231.9900
355+ $0.8156 $289.5380
475+ $0.7311 $347.2725
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Availability: 11,800 pieces
MOQ: 55 pcs
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