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Same model may have multiple batches, images only for reference.
SI7872DP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7872DP-T1-E3

Part No SI7872DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 6.4A PPAK SO-8
Datasheet
SI7872DP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.4A
Maximum Rds On at Id,Vgs 22 mOhm @ 7.5A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 11nC @ 4.5V
Maximum Power Dissipation 1.4W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8 Dual
Win Source Part Number 097601-SI7872DP-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7872DP-T1-E3 CAD Model

Description

The Vishay 097601-SI7872DP-T1-E3 is a medium-popularity electronic component that is categorized as discrete semiconductor products.

  • FET Type: 2 N-Channel (Half Bridge)
  • Gate Feature: Logic Level Gate
  • Maximum Power Dissipation: 1.4W
  • Continuous Drain Current @ 25°C: 6.4A
  • Maximum Rds On @ Id,Vgs: 22 mOhm @ 7.5A, 10V
  • Mounting Type: SMD (SMT)

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4692 $58.6500
305+ $0.3850 $117.4250
465+ $0.3730 $173.4450
640+ $0.3610 $231.0400
830+ $0.3490 $289.6700
1,110+ $0.3128 $347.2080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 495 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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