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Same model may have multiple batches, images only for reference.
SI7894ADP-T1-E3
Same model may have multiple batches, images only for reference.

SI7894ADP-T1-E3

Part No SI7894ADP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 17 A
Drain to Source Breakdown Voltage 30 V
Drain to Source Resistance 3.6 mΩ
Drain to Source Voltage (Vdss) 30 V
Element Configuration Single
Fall Time 15 ns
Gate to Source Voltage (Vgs) 12 V
Maximum Operating Temperature 150 °C
Max Power Dissipation 1.9 W
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 8
Power Dissipation 1.9 W
Radiation Hardening No
Rise Time 15 ns
RoHS Compliant
Turn-Off Delay Time 190 ns
Turn-On Delay Time 22 ns
Win Source Part Number 1092944-SI7894ADP-T1-E3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI7894ADP-T1-E3 CAD Model

Description

The 1092944-SI7894ADP-T1-E3 is a MOSFET transistor manufactured by Vishay.

  • Drain to Source Voltage (Vdss): 30 V
  • Power Dissipation: 1.9 W
  • Mount Type: Surface mount
  • Pin Count: 8 pins
  • Rise Time: 15 ns
  • Fall Time: 15 ns
  • Category: transistors - FETs, MOSFETs - RF
  • Supply and Demand Status: Shortage
  • RoHS Compliant: Yes

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