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Same model may have multiple batches, images only for reference.
SI7904BDN-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7904BDN-T1-E3

Part No SI7904BDN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 6A 1212-8
Datasheet
SI7904BDN-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6A
Maximum Rds On at Id,Vgs 30 mOhm @ 7.1A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 24nC @ 8V
Max Input Capacitance 860pF @ 10V
Maximum Power Dissipation 17.8W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8 Dual
Win Source Part Number 122284-SI7904BDN-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7904BDN-T1-E3 CAD Model

Description

The Vishay 122284-SI7904BDN-T1-E3 is a MOSFET dual N-channel power transistor that belongs to the Discrete Semiconductor Products category.

  • Manufacturer: Vishay
  • Package: PowerPAK 1212-8 Dual
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 6A
  • Maximum Rds On @ Id,Vgs: 30 mOhm @ 7.1A, 4.5V
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 24nC @ 8V
  • FET Type: Logic Level Gate
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.4871 $52.2291
50+ $2.0407 $102.0350
76+ $1.9770 $150.2520
105+ $1.9132 $200.8860
136+ $1.8494 $251.5184
181+ $1.6581 $300.1161
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