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SI7904BDN-T1-GE3

Name: SI7904BDN-T1-GE3
Brand: Vishay
SKU: 322891
Availability: InStock
Rating: 4.93 (5 reviews)

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	SI7904BDN-T1-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET 2N-CH 20V 6A PPAK 1212-8
Datasheet	SI7904BDN-T1-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Reel - TR
Status	Active
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain-Source Breakdown Voltage	20V
Continuous Drain Current at 25°C	6A
Maximum Rds On at Id,Vgs	30 mOhm @ 7.1A, 4.5V
Gate-Source Threshold Voltage	1V @ 250μA
Max Gate Charge	24nC @ 8V
Max Input Capacitance	860pF @ 10V
Maximum Power Dissipation	17.8W
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	PowerPAK 1212-8 Dual
Win Source Part Number	028690-SI7904BDN-T1-GE3
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian SI7904BDN-T1-GE3 CAD Model

Alternative Products

Description

Vishay's active electronic component is a 2 N-Channel (Dual) FET with a logic level gate.

Win Source Part Number: 028690-SI7904BDN-T1-GE3
FET Type: 2 N-Channel (Dual)
Gate: Logic Level Gate
Package: PowerPAK 1212-8 Dual
Mounting: SMD (SMT)
Maximum Power Dissipation: 17.8W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current @ 25°C: 6A
Gate-Source Threshold Voltage: 1V @ 250μA
Maximum Rds On @ Id,Vgs: 30 mOhm @ 7.1A, 4.5V

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
22+	$2.3459	$51.6098
52+	$1.9249	$100.0948
81+	$1.8647	$151.0407
111+	$1.8046	$200.3106
144+	$1.7444	$251.1936
192+	$1.5640	$300.2880

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 3,000 pieces

MOQ: 22 pcs

Order Increment : 1 pcs

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Expected Shipping Date	Ship today if order in (HKT)
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