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SI7904BDN-T1-GE3 Real Image SI7904BDN-T1-GE3 real image5504
Same model may have multiple batches, images only for reference.
SI7904BDN-T1-GE3 Real Image SI7904BDN-T1-GE3 real image5504
SI7904BDN-T1-GE3 Real Image SI7904BDN-T1-GE3 real image5504
Same model may have multiple batches, images only for reference.

SI7904BDN-T1-GE3

Part No SI7904BDN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 6A PPAK 1212-8
Datasheet
SI7904BDN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6A
Maximum Rds On at Id,Vgs 30 mOhm @ 7.1A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 24nC @ 8V
Max Input Capacitance 860pF @ 10V
Maximum Power Dissipation 17.8W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8 Dual
Win Source Part Number 028690-SI7904BDN-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI7904BDN-T1-GE3 CAD Model

Description

Vishay's active electronic component is a 2 N-Channel (Dual) FET with a logic level gate.

  • Win Source Part Number: 028690-SI7904BDN-T1-GE3
  • FET Type: 2 N-Channel (Dual)
  • Gate: Logic Level Gate
  • Package: PowerPAK 1212-8 Dual
  • Mounting: SMD (SMT)
  • Maximum Power Dissipation: 17.8W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 6A
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Rds On @ Id,Vgs: 30 mOhm @ 7.1A, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3459 $51.6098
52+ $1.9249 $100.0948
81+ $1.8647 $151.0407
111+ $1.8046 $200.3106
144+ $1.7444 $251.1936
192+ $1.5640 $300.2880
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Availability: 3,000 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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