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Same model may have multiple batches, images only for reference.
SI7909DN-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7909DN-T1-E3

Part No SI7909DN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 12V 5.3A 1212-8
Datasheet
SI7909DN-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 5.3A
Maximum Rds On at Id,Vgs 37 mOhm @ 7.7A, 4.5V
Gate-Source Threshold Voltage 1V @ 700μA
Max Gate Charge 24nC @ 4.5V
Maximum Power Dissipation 1.3W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8 Dual
Win Source Part Number 211673-SI7909DN-T1-E3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management, Portable Devices
Ultra Librarian 3D Model Ultra Librarian SI7909DN-T1-E3 CAD Model

Description

The Vishay SI7909DN-T1-E3 is a dual 2 P-channel MOSFET with a maximum power dissipation of 1.3W.

  • Power Dissipation: 1.3W
  • Package: PowerPAK 1212-8 Dual
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current @ 25°C: 5.3A
  • Gate-Source Threshold Voltage: 1V @ 700μA
  • Maximum Gate Charge: 24nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 37 mOhm @ 7.7A, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1056 $60.8080
130+ $0.9071 $117.9230
200+ $0.8789 $175.7800
275+ $0.8505 $233.8875
355+ $0.8221 $291.8455
475+ $0.7371 $350.1225
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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