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Same model may have multiple batches, images only for reference.
SI7956DP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7956DP-T1-E3

Part No SI7956DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 150V 2.6A PPAK SO-8 / Trans MOSFET N-CH 150V 2.6A 8-Pin PowerPAK SO T/R
Datasheet
SI7956DP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain Source Voltage 150V
Current - Continuous Drain (Id) @ 25°C 2.6A
Rds On (Maximum) @ Id, Vgs 105 mOhm @ 4.1A, 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 26nC @ 10V
Power - Max 1.4W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package PowerPAK SO-8 Dual
Manufacturer Package PowerPAK SO-8 Dual
Win Source Part Number 794328-SI7956DP-T1-E3
Popularity Medium
Supply and Demand Status Limited
Family Name Si7956DP
Introduction Date May 26, 2004
ECCN EAR99
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI7956DP-T1-E3 CAD Model

Description

The Vishay Siliconix SI7956DP-T1-E3 is a TrenchFET that is a part of the Si7956DP series.

  • Dual N-channel FET: Dual N-channel
  • Power Rating: 1.4W
  • Continuous Drain Current: 2.6A @ 25°C
  • Logic Level Gate: Logic level
  • Mounting: Surface Mountable
  • Package: PowerPAK SO-8 Dual
  • Drain-Source Voltage: 150V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Gate Charge: 26nC @ 10V
  • Rds On: 105 mOhm @ 4.1A, 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.2296 $55.3320
100+ $1.0090 $100.9000
155+ $0.9774 $151.4970
215+ $0.9459 $203.3685
275+ $0.9144 $251.4600
370+ $0.8198 $303.3260
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Availability: 12,000 pieces
MOQ: 45 pcs
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