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Same model may have multiple batches, images only for reference.
SI7960DP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7960DP-T1-E3

Part No SI7960DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 6.2A PPAK SO-8
Datasheet
SI7960DP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 6.2A
Maximum Rds On at Id,Vgs 21 mOhm @ 9.7A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 75nC @ 10V
Maximum Power Dissipation 1.4W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8 Dual
Win Source Part Number 028697-SI7960DP-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7960DP-T1-E3 CAD Model

Description

The Vishay SI7960DP-T1-E3 is a dual N-channel FET that belongs to the category of discrete semiconductor products.

  • Supply and Demand Status: Limited

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