The SI8441DB-T2-E1 is a P-Channel MOSFET transistor from the TrenchFET® series.

• Vdss (Drain to Source Voltage): 20 V
• Id (Continuous Drain Current): 10.5A (Tc) @ 25°C
• Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 4.5V
• Vgs(th) (Max) @ Id: 700mV @ 250μA
• Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
• Qg (Gate Charge) (Max) @ Vgs: 13 nC @ 5 V
• Ciss (Input Capacitance) (Max) @ Vds: 600 pF @ 10 V
• Vgs (Max): ±5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Supply and Demand Status: Balanced
• Package Quantity: 3000 per tape and reel
• Mounting: Surface Mount
• Package/Case: 6-UFBGA