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SI8808DB-T2-E1

Part No SI8808DB-T2-E1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V MICROFOOT
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 10nC @ 8V
Max Input Capacitance 330pF @ 15V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 95 mOhm @ 1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 4-Microfoot
Dimension 4-UFBGA
Win Source Part Number 1096330-SI8808DB-T2-E1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI8808DB-T2-E1 CAD Model

Description

It has a Win Source Part Number of 1096330-SI8808DB-T2-E1 and belongs to the Discrete Semiconductor Products category.

  • Win Source Part Number: 1096330-SI8808DB-T2-E1
  • Category: Discrete Semiconductor Products
  • Mounting Style: surface mount device (SMD)
  • Case/Package Dimension: 4-microfoot
  • Polarity: N-channel
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Power Dissipation: 500mW (Ta)
  • Continuous Drain Current at 25°C: -
  • Gate-Source Threshold Voltage: 900mV @ 250μA
  • Maximum Gate Charge: 10nC @ 8V
  • Maximum Input Capacitance: 330pF @ 15V
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Rds On at Id,Vgs: 95 mOhm @ 1A, 4.5V
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
275+ $0.2118 $58.2450
665+ $0.1739 $115.6435
1,030+ $0.1684 $173.4520
1,420+ $0.1630 $231.4600
1,835+ $0.1575 $289.0125
2,455+ $0.1413 $346.8915
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 91,508 pieces
MOQ: 275 pcs
Order Increment : 1 pcs
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