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SI9926BDY-T1-GE3

Part No SI9926BDY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 6.2A 8-SOIC / Trans MOSFET N-CH 20V 6.2A 8-Pin SOIC N T/R
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
Part Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain Source Voltage 20V
Current - Continuous Drain (Id) @ 25°C 6.2A
Rds On (Maximum) @ Id, Vgs 20 mOhm @ 8.2A, 4.5V
Vgs(th) (Maximum) @ Id 1.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 20nC @ 4.5V
Power - Max 1.14W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package 8-SOIC (0.154", 3.90mm Width)
Manufacturer Package 8-SO
Win Source Part Number 794388-SI9926BDY-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Family Name Si9926BDY
Introduction Date July 01, 2003
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI9926BDY-T1-GE3 CAD Model

Description

It is a limited supply and demand product and has an obsolete (EOL) part status from Vishay Siliconix.

  • Series: TrenchFET
  • FET Type: 2 N-Channel (Dual)
  • Gate Type: Logic Level
  • Maximum Continuous Drain Current: 6.2A
  • Maximum Power: 1.14W
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Mounting: Surface-mount technology (SMD)

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6955 $59.1175
205+ $0.5707 $116.9935
315+ $0.5528 $174.1320
435+ $0.5350 $232.7250
560+ $0.5172 $289.6320
750+ $0.4636 $347.7000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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