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SIA414DJ-T1-GE3

Name: SIA414DJ-T1-GE3
Brand: Vishay
SKU: 323349
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	SIA414DJ-T1-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R / MOSFET N-CH 8V 12A SC70-6
Datasheet	SIA414DJ-T1-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Reel - TR
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	8V
Continuous Drain Current at 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Gate-Source Threshold Voltage	800mV @ 250μA
Max Gate Charge	32nC @ 5V
Max Input Capacitance	1800pF @ 4V
Maximum Gate-Source Voltage	±5V
Power Dissipation (Max)	3.5W (Ta), 19W (Tc)
Maximum Rds On at Id,Vgs	11 mOhm @ 9.7A, 4.5V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	PowerPAK SC-70-6 Single
Dimension	PowerPAK SC-70-6
Win Source Part Number	028718-SIA414DJ-T1-GE3
Is this a common-used part?	Yes
Popularity	High
Supply and Demand Status	Sufficient
Family Name	SiA414DJ
Introduction Date	August 18, 2007
ECCN	EAR99
Halogen Free	Compliant
Estimated EOL Date	2022
Ultra Librarian 3D Model	Ultra Librarian SIA414DJ-T1-GE3 CAD Model

Alternative Products

Description

The SiA414DJ-T1-GE3 is an N-channel MOSFET transistor manufactured by Vishay.

Drain-Source Breakdown Voltage: 8V
Continuous Drain Current: 12A
Maximum Rds On: 11 mOhm @ 9.7A, 4.5V
Gate-Source Threshold Voltage: 800mV @ 250μA
Gate Charge (Qg): 32nC @ 5V
Package: PowerPAK SC-70-6 Single

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
80+	$0.6396	$51.1680
170+	$0.5991	$101.8470
260+	$0.5789	$150.5140
375+	$0.5384	$201.9000
485+	$0.5181	$251.2785
605+	$0.4979	$301.2295

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 54,000 pieces

MOQ: 80 pcs

Order Increment : 1 pcs

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