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SIA429DJT-T1-GE3

Part No SIA429DJT-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 12A SC-70
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 62nC @ 8V
Max Input Capacitance 1750pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Maximum Rds On at Id,Vgs 20.5 mOhm @ 6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Single
Dimension PowerPAK SC-70-6
Win Source Part Number 028723-SIA429DJT-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIA429DJT-T1-GE3 CAD Model

Description

This electronic component is manufactured by Vishay and has a win source part number of 028723-SIA429DJT-T1-GE3.

  • Power Dissipation: 3.5W (Ta), 19W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Drive Voltage: 1.5V, 4.5V
  • Temperature Range: -55°C to 150°C (TJ)
  • Mounting Technology: SMD (SMT)
  • Polarity: P-Channel
  • Case/Package: PowerPAK SC-70-6 Single
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Max Gate Charge: 62nC @ 8V
  • Max Input Capacitance: 1750pF @ 10V
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Rds On at Id,Vgs: 20.5 mOhm @ 6A, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4662 $51.3170
85+ $1.2031 $102.2635
130+ $1.1655 $151.5150
180+ $1.1279 $203.0220
230+ $1.0903 $250.7690
310+ $0.9775 $303.0250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 245 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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