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Same model may have multiple batches, images only for reference.
SIA814DJ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIA814DJ-T1-GE3

Part No SIA814DJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 4.5A SC70-6
Datasheet
SIA814DJ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 340pF @ 10V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.9W (Ta), 6.5W (Tc)
Maximum Rds On at Id,Vgs 61 mOhm @ 3.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Dual
Dimension PowerPAK SC-70-6 Dual
Win Source Part Number 1096383-SIA814DJ-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIA814DJ-T1-GE3 CAD Model

Description

The supply and demand status of this component is balanced.

  • Feature: MOSFET transistor with a Schottky diode
  • Maximum Power Dissipation: 1.9W
  • Continuous Drain Current: 4.5A

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $11.7660 $58.8300
12+ $9.6546 $115.8552
19+ $9.3520 $177.6880
26+ $9.0506 $235.3156
34+ $8.7491 $297.4694
45+ $7.8436 $352.9620
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,927 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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