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Same model may have multiple batches, images only for reference.
SIA913DJ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIA913DJ-T1-GE3

Part No SIA913DJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 12V 4.5A SC70-6
Datasheet
SIA913DJ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 4.5A
Maximum Rds On at Id,Vgs 70 mOhm @ 3.3A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 12nC @ 8V
Max Input Capacitance 400pF @ 6V
Maximum Power Dissipation 6.5W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Dual
Win Source Part Number 116101-SIA913DJ-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIA913DJ-T1-GE3 CAD Model

Description

The Vishay 116101-SIA913DJ-T1-GE3 is a 2 P-Channel (Dual) FET with a standard feature.

  • Mounting Type: SMD (SMT)
  • Case/Package: PowerPAK SC-70-6 Dual
  • Operating Temperature: -55°C to 150°C (TJ)
  • Maximum Power Dissipation: 6.5W
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current @ 25°C: 4.5A
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 12nC @ 8V
  • Maximum Input Capacitance: 400pF @ 6V
  • Maximum Rds On @ Id,Vgs: 70 mOhm @ 3.3A, 4.5V
  • Supply and Demand Status: balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.5254 $57.7940
270+ $0.4312 $116.4240
415+ $0.4176 $173.3040
575+ $0.4043 $232.4725
740+ $0.3908 $289.1920
990+ $0.3504 $346.8960
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,200 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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