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Same model may have multiple batches, images only for reference.
SIA914DJ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIA914DJ-T1-GE3

Part No SIA914DJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 4.5A SC70-6
Datasheet
SIA914DJ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.5A
Maximum Rds On at Id,Vgs 53 mOhm @ 3.7A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 11.5nC @ 8V
Max Input Capacitance 400pF @ 10V
Maximum Power Dissipation 6.5W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Dual
Win Source Part Number 104595-SIA914DJ-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIA914DJ-T1-GE3 CAD Model

Description

The Vishay A914DJ-T1-GE3 is a dual N-Channel MOSFET transistor with a Logic Level Gate feature.

  • Case/Package: PowerPAK SC-70-6 Dual
  • Mounting Type: SMD (SMT) technology
  • Application: Discrete Semiconductor Products
  • Maximum Power Dissipation: 6.5W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 4.5A
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Rds On @ Id,Vgs: 53 mOhm @ 3.7A, 4.5V
  • Market Status: open market
  • Supply and Demand Status: balanced
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3361 $58.8175
420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
895+ $0.2587 $231.5365
1,155+ $0.2506 $289.4430
1,550+ $0.2241 $347.3550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,079 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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