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Same model may have multiple batches, images only for reference.
SIA931DJ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIA931DJ-T1-GE3

Part No SIA931DJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 4.5A SC70-6L
Datasheet
SIA931DJ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.5A
Maximum Rds On at Id,Vgs 65 mOhm @ 3A, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 445pF @ 15V
Maximum Power Dissipation 7.8W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Dual
Win Source Part Number 104772-SIA931DJ-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIA931DJ-T1-GE3 CAD Model

Description

The Vishay SIA931DJ-T1-GE3 is a power MOSFET with a maximum power dissipation of 7.8W and a drain-source breakdown voltage of 30V.

  • Continuous Drain Current @ 25°C: 4.5A
  • Maximum Rds On @ Id,Vgs: 65 mOhm @ 3A, 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Gate Charge: 13nC @ 10V
  • Alternative Parts: FDMA3023PZ and SiA915DJ-T1-GE3
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5821 $52.3890
210+ $0.4777 $100.3170
325+ $0.4627 $150.3775
450+ $0.4478 $201.5100
580+ $0.4329 $251.0820
775+ $0.3881 $300.7775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 109,689 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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