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Same model may have multiple batches, images only for reference.
SIB419DK-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIB419DK-T1-GE3

Part No SIB419DK-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 60mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.82 nC @ 5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 562 pF @ 6 V
Power Dissipation (Max) 2.45W (Ta), 13.1W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SC-75-6
Package / Case PowerPAK® SC-75-6
Base Product Number SIB419
Other Names SIB419DK-T1-GE3CT,SIB419DK-T1-GE3TR,SIB419DK-T1-GE3DKR,SIB419DKT1GE3
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277553-SIB419DK-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIB419DK-T1-GE3 CAD Model

Description

The SIB419DK-T1-GE3 is a P-channel MOSFET transistor with a drain to source voltage of 12V and a continuous drain current of 9A @ 25°C.

  • Maximum On-State Resistance: 60mΩ @ 5.2A and 4.5V gate-source voltage
  • Mounting: tape and reel package
  • Standard Package: 3,000
  • Operating Temperature Range: -55°C to 150°C
  • Gate Charge: 11.82 nC @ 5V
  • Input Capacitance: 562 pF @ 6V drain to source voltage
  • Series: TrenchFET series

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