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SIB456DK-T1-GE3

Part No SIB456DK-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 6.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 185mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 130 pF @ 50 V
Power Dissipation (Max) 2.4W (Ta), 13W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SC-75-6
Package / Case PowerPAK® SC-75-6
Base Product Number SIB456
Other Names SIB456DKT1GE3,SIB456DK-T1-GE3TR,SIB456DK-T1-GE3CT,SIB456DK-T1-GE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277580-SIB456DK-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIB456DK-T1-GE3 CAD Model

Description

The SIB456DK-T1-GE3 is an N-channel MOSFET transistor that is used in discrete semiconductor products, specifically in FETs, MOSFETs - Single.

  • Part of: TrenchFET® series
  • Mounting: through surface-mount technology
  • Maximum drain to source voltage: 100V
  • Continuous drain current: 6.3A @ 25°C
  • Maximum Rds On: 185mOhm @ 1.9A and 10V
  • Maximum gate-source voltage: ±20V
  • Maximum operating temperature: -55°C to 150°C
  • Supplied by: Vishay Siliconix

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1642 $52.3890
105+ $0.9553 $100.3065
165+ $0.9254 $152.6910
225+ $0.8956 $201.5100
290+ $0.8657 $251.0530
390+ $0.7762 $302.7180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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