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SIDR668DP-T1-GE3

Part No SIDR668DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 23.2A (Ta), 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 108 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5400 pF @ 50 V
Power Dissipation (Max) 6.25W (Ta), 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8DC
Package / Case PowerPAK® SO-8
Base Product Number SIDR668
Other Names SIDR668DP-T1-GE3DKR,SIDR668DP-T1-GE3TR,SIDR668DP-T1-GE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277629-SIDR668DP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIDR668DP-T1-GE3 CAD Model

Description

The SIDR668DP-T1-GE3 is an N-channel MOSFET transistor from Vishay Siliconix.

  • Series: TrenchFET® Gen IV
  • Package: PowerPAK® SO-8
  • Power Dissipation: 6.25W (Ta), 125W (Tc)
  • Maximum Continuous Drain Current: 23.2A (Ta), 95A (Tc)
  • Maximum Drain to Source Voltage: 100V
  • Maximum On-Resistance: 4.8mOhm @ 20A, 10V
  • Gate Charge: 108 nC @ 10 V
  • Input Capacitance: 5400 pF @ 50 V
  • Maximum Gate Source Voltage: ±20V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.9665 $53.6985
21+ $4.8956 $102.8076
32+ $4.7426 $151.7632
44+ $4.5896 $201.9424
57+ $4.4366 $252.8862
76+ $3.9777 $302.3052
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,411 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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