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Same model may have multiple batches, images only for reference.
SIE848DF-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SIE848DF-T1-E3

Part No SIE848DF-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 60A POLARPAK
Datasheet
SIE848DF-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 138nC @ 10V
Max Input Capacitance 6100pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5.2W (Ta), 125W (Tc)
Maximum Rds On at Id,Vgs 1.6 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 10-PolarPAK (L)
Dimension 10-PolarPAK (L)
Win Source Part Number 064633-SIE848DF-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIE848DF-T1-E3 CAD Model

Description

The Vishay 064633-SIE848DF-T1-E3 is an N-channel MOSFET transistor that is designed to operate in a temperature range of -55°C to 150°C.

  • Maximum Power Dissipation (Ta): 5.2W
  • Maximum Power Dissipation (Tc): 125W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (Tc): 60A @ 25°C
  • Maximum Rds On: 1.6 mOhm @ 25A, 10V
  • Package: 10-PolarPAK (L)
  • Operating Temperature Range: -55°C to 150°C

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Quantity Unit Price Ext. Price
50+ $1.1862 $59.3100
120+ $0.9737 $116.8440
185+ $0.9425 $174.3625
255+ $0.9125 $232.6875
330+ $0.8824 $291.1920
440+ $0.7912 $348.1280
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