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SIHB23N60E-GE3

Part No SIHB23N60E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 23A D2PAK / N-Channel 600 V 23A (Tc) 227W (Tc) Surface Mount D²PAK (TO-263)
Datasheet
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay Siliconix
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 158mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2418 pF @ 100 V
Power Dissipation (Max) 227W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB
Base Product Number SIHB23
Standard Package 50
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1350765-SIHB23N60E-GE3
Ultra Librarian 3D Model Ultra Librarian SIHB23N60E-GE3 CAD Model

Description

The SIHB23N60E-GE3 is an N-channel MOSFET transistor designed for use in power electronics applications.

  • Drain-to-Source Voltage: 600V
  • Continuous Drain Current: 23A @ 25°C
  • Power Dissipation: 227W (Tc)
  • Maximum Rds On: 158mOhm @ 12A and 10V
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Maximum Gate Voltage: ±30V
  • Gate Charge: 95nC @ 10V
  • Input Capacitance: 2418pF @ 100Vds
  • Package Type: tube

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.2372 $58.2696
44+ $2.6562 $116.8728
68+ $2.5731 $174.9708
93+ $2.4902 $231.5886
120+ $2.4072 $288.8640
161+ $2.1582 $347.4702
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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