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SIHD12N50E-GE3

Part No SIHD12N50E-GE3
Manufacturer Vishay
Catalog Transistors – FETs, MOSFETs – Single
Description MOSFET N-CH 550V 10.5A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 550 V
Current - Continuous Drain (Id) @ 25°C 10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 886 pF @ 100 V
Power Dissipation (Max) 114W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TA)
Mounting Type Surface Mount
Supplier Device Package DPAK
Case / Package TO-252-3, DPak (2 Leads + Tab), SC-63
Package Tube
Supply and Demand Status Limited
Win Source Part Number 1510386-SIHD12N50E-GE3
Ultra Librarian 3D Model Ultra Librarian SIHD12N50E-GE3 CAD Model

Description

N

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Shipping Information

Shipped from HK warehouse
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