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Same model may have multiple batches, images only for reference.
SIHD4N80E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHD4N80E-GE3

Part No SIHD4N80E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHD4N80E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.27Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 622 pF @ 100 V
Power Dissipation (Max) 69W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SIHD4
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277775-SIHD4N80E-GE3
Ultra Librarian 3D Model Ultra Librarian SIHD4N80E-GE3 CAD Model

Description

The electronic component with Id 1047506 is a Vishay Siliconix manufactured device with a Win Source Part Number 1277775-SIHD4N80E-GE3.

  • Category: discrete semiconductor products and transistors - FETs, MOSFETs - single
  • Series: E series
  • Package: bulk
  • Standard Package: 3,000
  • Technology: MOSFET (Metal Oxide)
  • FET Type: N-Channel
  • Drain to Source Voltage (Vdss): 800 V
  • Continuous Drain Current (Id): 4.3A (Tc) @ 25°C
  • Maximum On-State Resistance: 1.27Ohm @ 2A, 10V
  • Gate Threshold Voltage (Vgs(th)): 4V @ 250μA.29.0095

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