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SIHF15N60E

Part No SIHF15N60E
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 15A TO220 FULLP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 78nC @ 10V
Max Input Capacitance 1350pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 34W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220 Full Pack
Dimension TO-220-3 Full Pack
Win Source Part Number 211702-SIHF15N60E
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management, Communications & Networking, Lighting, Portable Devices, Computers & Computer Peripherals, Alternative Energy, Motor Drive & Control
Ultra Librarian 3D Model Ultra Librarian SIHF15N60E CAD Model

Description

The Vishay 211702-SIHF15N60E is a MOSFET transistor that can handle up to 15A of continuous drain current.

  • Continuous Drain Current: 15A
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.5271 $58.1233
56+ $2.0744 $116.1664
87+ $2.0097 $174.8439
119+ $1.9439 $231.3241
154+ $1.8792 $289.3968
206+ $1.6851 $347.1306
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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