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SIHF22N60S-E3

Part No SIHF22N60S-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Rds On (Max) @ Id, Vgs 190mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 2810 pF @ 25 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Full Pack
Package / Case TO-220-3 Full Pack
Base Product Number SIHF22
Other Names SIHF22N60S-E3CT,SIHF22N60S-E3CT
Standard Package 1,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277857-SIHF22N60S-E3
Ultra Librarian 3D Model Ultra Librarian SIHF22N60S-E3 CAD Model

Description

The Vishay Siliconix electronic component with Win Source Part Number 1277857-SIHF22N60S-E3 is a MOSFET transistor that has a maximum drain to source voltage of 600V and can handle a continuous drain current of 22A @ 25°C.

  • Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V
  • Temperature Range: -55°C ~ 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.2566 $62.5660
23+ $5.1340 $118.0820
35+ $4.9734 $174.0690
48+ $4.8129 $231.0192
63+ $4.6523 $293.0949
84+ $4.1719 $350.4396
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 38 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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