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SIHFR420A-GE3

Part No SIHFR420A-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3400 pF @ 25 V
Power Dissipation (Max) 83W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SIHFR420
Other Names 742-SIHFR420A-GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277913-SIHFR420A-GE3
Ultra Librarian 3D Model Ultra Librarian SIHFR420A-GE3 CAD Model

Description

The Vishay Siliconix SIHFR420A-GE3 is a discrete semiconductor product used in electronic devices.

  • MOSFET Type: N-channel FET
  • Drain to Source Voltage: 500V
  • Continuous Drain Current: 3.3A @ 25°C
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25V
  • Operating Temperature Range: from -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4553 $50.9355
85+ $1.1941 $101.4985
130+ $1.1568 $150.3840
180+ $1.1195 $201.5100
235+ $1.0821 $254.2935
310+ $0.9702 $300.7620
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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