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Same model may have multiple batches, images only for reference.
SIHG16N50C-E3 Vishay
Same model may have multiple batches, images only for reference.

SIHG16N50C-E3

Part No SIHG16N50C-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 16A TO-247AC
Datasheet
SIHG16N50C-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 68nC @ 10V
Max Input Capacitance 1900pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Dimension TO-247-3
Win Source Part Number 064637-SIHG16N50C-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIHG16N50C-E3 CAD Model

Description

The Vishay MOSFET is a through-hole component that is perfect for use in discrete semiconductor products.

  • Polarity: N-Channel
  • Maximum Power Dissipation (Tc): 250W
  • Drive Voltage: 10V
  • Product Status: active
  • Temperature Range (TJ): -55°C to 150°C
  • Case/Package: TO-247AC
  • Dimension: TO-247-3
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current (Tc): 16A @ 25°C
  • Maximum Gate Charge: 68nC @ 10V
  • Maximum Input Capacitance: 1900pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 380 mOhm @ 8A, 10V
  • Supply and Demand Status: balanced

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128+ $2.2568 $288.8704
172+ $2.0233 $348.0076
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