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Same model may have multiple batches, images only for reference.
SIHG30N60E-E3
Same model may have multiple batches, images only for reference.

SIHG30N60E-E3

Part No SIHG30N60E-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 29A TO247AC / N-Channel 600 V 29A (Tc) 250W (Tc) Through Hole TO-247AC
Datasheet
SIHG30N60E-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 100 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
Base Product Number SIHG30
Standard Package 500 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 933791-SIHG30N60E-E3
Ultra Librarian 3D Model Ultra Librarian SIHG30N60E-E3 CAD Model

Description

The SIHG30N60E-E3 is an N-channel MOSFET transistor designed for general-purpose applications.

  • Channel Type: N-channel
  • Vdss: 600V
  • Id: 29A @ 25°C
  • Rds On (Max): 125mOhm @ 15A and 10V
  • Vgs(th): 4V @ 250μA
  • Power Dissipation: 250W
  • Mounting Type: Through-hole
  • Package: TO-247-3
  • Gate Charge (Qg): 130nC @ 10V
  • Temperature Range: -55°C to 150°C

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Quantity Unit Price Ext. Price
11+ $5.4996 $60.4956
26+ $4.5125 $117.3250
40+ $4.3714 $174.8560
55+ $4.2305 $232.6775
71+ $4.0895 $290.3545
95+ $3.6664 $348.3080
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