The SIHG33N60E-E3 is an N-channel MOSFET transistor from Vishay E series, designed for single-phase applications.

• Package: Tube package
• Standard Package: 500 units
• Drain to Source Voltage (Vdss): 600V
• Continuous Drain Current (Id): 33A (Tc)
• Maximum On-Resistance (Rds On): 99mOhm @ 16.5A and 10V gate-source voltage (Vgs)
• Maximum Gate-Source Threshold Voltage (Vgs(th)): 4V @ 250μA
• Power Dissipation: 278W (Tc)
• Mounting: Through-hole package with TO-247-3 case
• Gate Charge (Qg): 150nC @ 10V gate-source voltage (Vgs)
• Input Capacitance (Ciss): 3508pF @ 100V drain-source voltage (Vds)
• Temperature Range: -55°C to 150°C (TJ)
• HTSUS: 8541.29.0095