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Same model may have multiple batches, images only for reference.
SIHJ240N60E-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHJ240N60E-T1-GE3

Part No SIHJ240N60E-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHJ240N60E-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 240mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 783 pF @ 100 V
Power Dissipation (Max) 89W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIHJ240
Other Names SIHJ240N60E-T1-GE3DKR,SIHJ240N60E-T1-GE3CT,SIHJ240N60E-T1-GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277774-SIHJ240N60E-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIHJ240N60E-T1-GE3 CAD Model

Description

The Vishay SIHJ240N60E-T1-GE3 is an N-channel MOSFET that offers a stable and reliable performance.

  • Drain to Source Voltage: 600 V
  • Continuous Drain Current: 12A @ 25°C
  • Maximum Rds On: 240mOhm @ 5.5A and 10V
  • Package: PowerPAK SO-8 surface mount package
  • Gate Charge: 23 nC @ 10 V
  • Series: E series
  • Category: discrete semiconductor products-transistors-FETs-MOSFETs-single
  • Package Includes: 3000 pieces
  • MSL Level: 1 (Unlimited)
  • HTSUS Code: 8541.29.0095

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