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SIHLZ34S-GE3

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	SIHLZ34S-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Datasheet	SIHLZ34S-GE3 Datasheet
Sample
Rohs State
ECAD Module
	Add to BOM List New List Existing List This product has been added to your list. List name
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Vishay Siliconix
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4V, 5V
Rds On (Max) @ Id, Vgs	50mOhm @ 18A, 5V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 5 V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	1600 pF @ 25 V
Power Dissipation (Max)	3.7W (Ta), 88W (Tc)
Temperature Range - Operating	-55°C ~ 175°C (TJ)
Mounting	SMD (SMT)
Supplier Device Package	D2PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number	SIHLZ34
Other Names	742-SIHLZ34S-GE3TR
Standard Package	1,000
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1277910-SIHLZ34S-GE3
Ultra Librarian 3D Model	Ultra Librarian SIHLZ34S-GE3 CAD Model

Alternative Products

Description

The Vishay Siliconix 1277910-SIHLZ34S-GE3 is a high-performance N-channel MOSFET transistor that is designed for use in various electronic applications.

Drain to Source Voltage: 60 V
Continuous Drain Current: 30A
Maximum Rds On: 50mOhm @ 18A and 5V
Package: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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