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Same model may have multiple batches, images only for reference.
SIHB24N65ET1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHB24N65ET1-GE3

Part No SIHB24N65ET1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 24A TO263  /  N-Channel 650 V 24A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
Datasheet
SIHB24N65ET1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 145mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2740 pF @ 100 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SIHB24
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 800
Win Source Part Number 1112940-SIHB24N65ET1-GE3
Ultra Librarian 3D Model Ultra Librarian SIHB24N65ET1-GE3 CAD Model

Description

The SIHB24N65ET1-GE3 is an N-channel MOSFET transistor that has a drain to source voltage of 650V and a continuous drain current of 24A (Tc) @ 25°C.

  • Channel Type: N-Channel
  • Drain to Source Voltage: 650V
  • Continuous Drain Current: 24A (Tc) @ 25°C
  • Maximum Rds On: 145mOhm @ 12A, 10V
  • Maximum Vgs(th): 4V @ 250µA
  • Maximum Power Dissipation: 250W (Tc)
  • Gate Charge (Qg): 122 nC @ 10 V
  • Input Capacitance (Ciss): 2740 pF @ 100 V
  • Vgs (Max): ±30V
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Standard Package: 800
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • ECCN: EAR99
  • Threat Level: 84% Threatened

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