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Same model may have multiple batches, images only for reference.
SIHP11N80E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHP11N80E-GE3

Part No SIHP11N80E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 12A TO220AB
Datasheet
SIHP11N80E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features N-Channel 800 V 12A (Tc) 179W (Tc) Through Hole TO-220AB
Manufacturer Vishay
Series E
Package Tube
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Through Hole
Package TO-220-3
Case / Package TO-220AB
Family Name SIHP11
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 1000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 894999-SIHP11N80E-GE3
Ultra Librarian 3D Model Ultra Librarian SIHP11N80E-GE3 CAD Model

Description

The Vishay SIHP11N80E-GE3 is an N-channel MOSFET transistor that is designed to be used in a variety of electronic applications.

  • Maximum Voltage Rating: 800V
  • Maximum Current Rating: 12A
  • Package: TO-220AB package
  • Mounting: through hole
  • Package Type: tube package
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Power Dissipation Rating: 179W (Tc)
  • Family: SIHP11 family
  • Category: discrete semiconductor products
  • Case/Package: TO-220AB
  • Popularity: popular in the market and has a balanced supply and demand status
  • Package Quantity: 1000 units
  • Estimated Production Lead Time: 51 weeks
  • ECCN: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.9061 $58.1220
49+ $2.3845 $116.8405
75+ $2.3100 $173.2500
104+ $2.2355 $232.4920
134+ $2.1610 $289.5740
179+ $1.9374 $346.7946
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Availability: 2,370 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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