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SIHP12N65E-GE3

Name: SIHP12N65E-GE3
Brand: Vishay
SKU: 513190
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	SIHP12N65E-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 650V 12A TO-220AB
Datasheet	SIHP12N65E-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Tube/Rail
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	650V
Continuous Drain Current at 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	4V @ 250μA
Max Gate Charge	70nC @ 10V
Max Input Capacitance	1224pF @ 100V
Maximum Gate-Source Voltage	±30V
Power Dissipation (Max)	156W (Tc)
Maximum Rds On at Id,Vgs	380 mOhm @ 6A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	Through Hole
Case / Package	TO-220AB
Dimension	TO-220-3
Win Source Part Number	1096437-SIHP12N65E-GE3
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian SIHP12N65E-GE3 CAD Model

Alternative Products

Description

The SIHP12N65E-GE3 is an N-Channel MOSFET manufactured by Vishay.

Drain-Source Breakdown Voltage: 650V
Maximum Continuous Drain Current @ 25°C: 12A
Gate-Source Threshold Voltage: 4V @ 250μA
Maximum Gate Charge: 70nC @ 10V
Maximum Input Capacitance: 1224pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On @ Id, Vgs: 380 mOhm @ 6A and 10V
Package: TO-220AB
Mounting Type: through a hole
Popularity: popular part with a medium demand
Suitable for: use in discrete semiconductor products

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
35+	$1.7588	$61.5580
85+	$1.4432	$122.6720
125+	$1.3982	$174.7750
175+	$1.3530	$236.7750
225+	$1.3079	$294.2775
300+	$1.1726	$351.7800

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 10,400 pieces

MOQ: 35 pcs

Order Increment : 1 pcs

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