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Same model may have multiple batches, images only for reference.
SIHP23N60E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHP23N60E-GE3

Part No SIHP23N60E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 23A TO-220AB
Datasheet
SIHP23N60E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 95nC @ 10V
Max Input Capacitance 2418pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 227W (Tc)
Maximum Rds On at Id,Vgs 158 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1096440-SIHP23N60E-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIHP23N60E-GE3 CAD Model

Description

The Vishay SIHP23N60E-GE3 is an N-channel MOSFET designed for through-hole mounting.

  • Maximum Power Dissipation: 227W (Tc)
  • Continuous Drain Current: 23A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 95nC @ 10V
  • Maximum Input Capacitance: 2418pF @ 100V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On @ Id, Vgs: 158 mOhm @ 12A, 10V
  • Popularity: commonly used and has a medium popularity
  • Category: discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.6671 $58.6762
53+ $2.1884 $115.9852
82+ $2.1200 $173.8400
113+ $2.0517 $231.8421
146+ $1.9833 $289.5618
195+ $1.7782 $346.7490
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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