The Vishay 1028566-SIHP24N65E-GE3 is an N-Channel MOSFET transistor that has a drain to source voltage (Vdss) of 650 V and a continuous drain current (Id) of 24A (Tc).

• Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Power Dissipation (Max): 250W (Tc)
• Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
• Vgs (Max): ±30V
• Mounting Type: Through-hole
• Package/Case: TO-220-3
• Packaging: Tube
• Standard Package: 1,000
• Operating Temperature Range: -55°C to 150°C (TJ)
• MSL Level: 1 (Unlimited)