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Same model may have multiple batches, images only for reference.
SIHP38N60E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHP38N60E-GE3

Part No SIHP38N60E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHP38N60E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 183 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 100 V
Power Dissipation (Max) 313W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SIHP38
Standard Package 50
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277760-SIHP38N60E-GE3
Ultra Librarian 3D Model Ultra Librarian SIHP38N60E-GE3 CAD Model

Description

The Vishay SIHP38N60E-GE3 MOSFET is an N-channel transistor with a drain-source voltage of 600V and a continuous drain current of 43A @ 25°C.

  • Maximum Gate-Source Voltage: ±30V
  • Gate-Source Voltage Threshold: 4V @ 250µA
  • Maximum Power Dissipation: 313W
  • Package: TO-220-3 package
  • Gate Charge: 183nC @ 10V
  • Input Capacitance: 3600pF @ 100V

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $18.9180 $56.7540
7+ $15.5224 $108.6568
10+ $15.0374 $150.3740
14+ $14.5523 $203.7322
18+ $14.0672 $253.2096
24+ $12.6120 $302.6880
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Availability: 15,250 pieces
MOQ: 3 pcs
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