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SIHP6N65E-GE3

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	SIHP6N65E-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 650V 7A TO220AB / N-Channel 650 V 7A (Tc) 78W (Tc) Through Hole TO-220AB
Datasheet	SIHP6N65E-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Vishay Siliconix
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	820 pF @ 100 V
Power Dissipation (Max)	78W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Base Product Number	SIHP6
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1,000
Win Source Part Number	1219013-SIHP6N65E-GE3
Ultra Librarian 3D Model	Ultra Librarian SIHP6N65E-GE3 CAD Model

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Description

The electronic component with the Win Source Part Number 1219013-SIHP6N65E-GE3 is a MOSFET transistor with a drain to source voltage of 650V and a continuous drain current of 7A.

Mounting Type: Through hole
Package/Case: TO-220-3
Application: Ideal for use in a variety of electronic applications.

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