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Same model may have multiple batches, images only for reference.
SIHFS9N60A-GE3 Vishay
Same model may have multiple batches, images only for reference.

SIHFS9N60A-GE3

Part No SIHFS9N60A-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHFS9N60A-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 750mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 25 V
Power Dissipation (Max) 170W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SIHFS9
Standard Package 1,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277908-SIHFS9N60A-GE3
Ultra Librarian 3D Model Ultra Librarian SIHFS9N60A-GE3 CAD Model

Description

The Vishay Siliconix SIHFS9N60A-GE3 is a MOSFET transistor that belongs to the category of discrete semiconductor products.

  • Win Source Part Number: 1277908-SIHFS9N60A-GE3
  • Package/Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • FET Type: N-channel
  • Drain-to-Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id) @ 25°C: 9.2A (Tc)
  • Maximum Rds On @ Id, Vgs: 750mOhm @ 5.5A, 10V
  • Maximum Vgs(th) @ Id: 4V @ 250μA
  • Maximum Power Dissipation: 170W (Tc)
  • Gate Charge (Qg) @ max Vgs: 49nC @ 10V
  • Input Capacitance (Ciss) @ max Vds: 1400pF @ 25V
  • Maximum Vgs: ±30V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • MSL Level: 1 (unlimited)
  • HTSUS: 8541.29.0095

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