The Vishay Siliconix SIHP8N50D-GE3 is an N-channel MOSFET transistor with a drain to source voltage (Vdss) of 500V and a continuous drain current (Id) of 8.7A (Tc) @ 25°C.

• Manufacturer: Vishay Siliconix
• Channel Type: N-Channel MOSFET
• Drain to Source Voltage (Vdss): 500V
• Continuous Drain Current (Id) @ 25°C: 8.7A (Tc)
• Maximum Rds On @ Id, Vgs: 850mOhm @ 4A, 10V
• Gate Charge (Qg) Maximum @ Vgs: 30 nC @ 10V
• Input Capacitance (Ciss) Maximum @ Vds: 527 pF @ 100V
• Vgs(th) Maximum @ Id: 5V @ 250µA
• Power Dissipation (Max) @ Tc: 156W (Tc)
• Temperature Range: -55°C to 150°C (TJ)
• Package: TO-220-3
• Supplier Device Package: TO-220AB
• Drive Voltage (Max Rds On, Min Rds On): 10V