The SIHW33N60E-GE3 is a MOSFET (Metal Oxide) N-Channel FET transistor designed for use in discrete semiconductor products such as transistors, FETs, and MOSFETs. SIHW33N60E-GE3 is manufactured by .

• Drain to Source Voltage (Vdss): 600 V
• Continuous Drain Current (Id): 33A (Tc) @ 25°C
• Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
• Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
• Power Dissipation (Max): 278W (Tc)
• Gate-Source Voltage (Vgs(th)): 4V @ 250μA
• Package: TO-3P-3 Full Pack
• Supplier Device Package: TO-247AD