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Same model may have multiple batches, images only for reference.
SIHW47N60EF-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHW47N60EF-GE3

Part No SIHW47N60EF-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHW47N60EF-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 24A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 225 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4854 pF @ 100 V
Power Dissipation (Max) 379W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AD
Package / Case TO-247-3
Base Product Number SIHW47
Standard Package 480
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277882-SIHW47N60EF-GE3
Ultra Librarian 3D Model Ultra Librarian SIHW47N60EF-GE3 CAD Model

Description

The Vishay Siliconix SIHW47N60EF-GE3 is a MOSFET (Metal Oxide) transistor with N-Channel FET type.

  • Maximum Drain to Source Voltage: 600 V
  • Continuous Drain Current: 47A @ 25°C
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V
  • Device Package: TO-247-3
  • Supplier Device Package: TO-247AD
  • Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4854 pF @ 100 V
  • Operating Temperature Range: -55°C ~ 150°C (TJ)

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