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Same model may have multiple batches, images only for reference.
SIHW61N65EF-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHW61N65EF-GE3

Part No SIHW61N65EF-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHW61N65EF-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 47mOhm @ 30.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 371 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 7407 pF @ 100 V
Power Dissipation (Max) 520W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AD
Package / Case TO-247-3
Base Product Number SIHW61
Standard Package 480
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277736-SIHW61N65EF-GE3
Ultra Librarian 3D Model Ultra Librarian SIHW61N65EF-GE3 CAD Model

Description

The SIHW61N65EF-GE3 is an N-channel MOSFET transistor from Vishay Siliconix.

  • Drain-to-Source Voltage (Vdss): 650V
  • Continuous Current: 64A @ 25°C
  • Maximum On-Resistance (Rds On): 47mOhm @ 30.5A, 10V
  • Gate Threshold Voltage (Vgs(th)): 4V @ 250μA
  • Maximum Power Dissipation: 520W @ a case temperature (Tc) of 25°C
  • Drive Voltage: 10V
  • Package: TO-247-3
  • Operating Temperature Range: -55°C to 150°C

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